Wake-Up Free Ultrathin Ferroelectric Hf(0.5)Zr(0.5)O(2) Films

The development of the new generation of non-volatile high-density ferroelectric memory requires the utilization of ultrathin ferroelectric films. The most promising candidates are polycrystalline-doped HfO(2) films because of their perfect compatibility with silicon technology and excellent ferroelectric properties. However, the remanent polarization of HfO(2) films is known to degrade when their thickness is reduced to a few nanometers. One of the reasons for this phenomenon is the wake-up effect, which is more pronounced in the thinner the film. For the ultrathin HfO(2) films, it can be so long-lasting that degradation occurs even before the wake-up procedure is completed. In this work, an approach to suppress the wake-up in ultrathin Hf(0.5)Zr(0.5)O(2) films is elucidated. By engineering internal built-in fields in an as-prepared structure, a stable ferroelectricity without a wake-up effect is induced in 4.5 nm thick Hf(0.5)Zr(0.5)O(2) film. By analysis of the functional characteristics of ferroelectric structures with a different pattern of internal built-in fields and their comparison with the results of in situ piezoresponse force microscopy and synchrotron X-ray micro-diffraction, the important role of built-in fields in ferroelectricity of ultrathin Hf(0.5)Zr(0.5)O(2) films as well as the origin of stable ferroelectric properties is revealed.