A 3.06 μm Single-Photon Avalanche Diode Pixel with Embedded Metal Contact and Power Grid on Deep Trench Pixel Isolation for High-Resolution Photon Counting †

In this study, a 3.06 μm pitch single-photon avalanche diode (SPAD) pixel with an embedded metal contact and power grid on two-step deep trench isolation in the pixel is presented. The embedded metal contact can suppress edge breakdown and reduce the dark count rate to 15.8 cps with the optimized po...

Descripción completa

Detalles Bibliográficos
Autores principales: Ogi, Jun, Sano, Fumiaki, Nakata, Tatsuya, Kubo, Yoshiki, Onishi, Wataru, Koswaththage, Charith, Mochizuki, Takeya, Tashiro, Yoshiaki, Hizu, Kazuki, Takatsuka, Takafumi, Watanabe, Iori, Koga, Fumihiko, Hirano, Tomoyuki, Oike, Yusuke
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10648928/
https://www.ncbi.nlm.nih.gov/pubmed/37960605
http://dx.doi.org/10.3390/s23218906

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10648928/
https://www.ncbi.nlm.nih.gov/pubmed/37960605
http://dx.doi.org/10.3390/s23218906

Ejemplares similares