A 3.06 μm Single-Photon Avalanche Diode Pixel with Embedded Metal Contact and Power Grid on Deep Trench Pixel Isolation for High-Resolution Photon Counting †

In this study, a 3.06 μm pitch single-photon avalanche diode (SPAD) pixel with an embedded metal contact and power grid on two-step deep trench isolation in the pixel is presented. The embedded metal contact can suppress edge breakdown and reduce the dark count rate to 15.8 cps with the optimized po...

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Autores principales: Ogi, Jun, Sano, Fumiaki, Nakata, Tatsuya, Kubo, Yoshiki, Onishi, Wataru, Koswaththage, Charith, Mochizuki, Takeya, Tashiro, Yoshiaki, Hizu, Kazuki, Takatsuka, Takafumi, Watanabe, Iori, Koga, Fumihiko, Hirano, Tomoyuki, Oike, Yusuke
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10648928/
https://www.ncbi.nlm.nih.gov/pubmed/37960605
http://dx.doi.org/10.3390/s23218906
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author Ogi, Jun
Sano, Fumiaki
Nakata, Tatsuya
Kubo, Yoshiki
Onishi, Wataru
Koswaththage, Charith
Mochizuki, Takeya
Tashiro, Yoshiaki
Hizu, Kazuki
Takatsuka, Takafumi
Watanabe, Iori
Koga, Fumihiko
Hirano, Tomoyuki
Oike, Yusuke
author_facet Ogi, Jun
Sano, Fumiaki
Nakata, Tatsuya
Kubo, Yoshiki
Onishi, Wataru
Koswaththage, Charith
Mochizuki, Takeya
Tashiro, Yoshiaki
Hizu, Kazuki
Takatsuka, Takafumi
Watanabe, Iori
Koga, Fumihiko
Hirano, Tomoyuki
Oike, Yusuke
author_sort Ogi, Jun
collection PubMed
description In this study, a 3.06 μm pitch single-photon avalanche diode (SPAD) pixel with an embedded metal contact and power grid on two-step deep trench isolation in the pixel is presented. The embedded metal contact can suppress edge breakdown and reduce the dark count rate to 15.8 cps with the optimized potential design. The embedded metal for the contact is also used as an optical shield and a low crosstalk probability of 0.4% is achieved, while the photon detection efficiency is as high as 57%. In addition, the integration of a power grid and the polysilicon resistor on SPAD pixels can help to reduce the voltage drop in anode power supply and reduce the power consumption with SPAD multiplication, respectively, in a large SPAD pixel array for a high-resolution photon-counting image sensor.
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spelling pubmed-106489282023-11-01 A 3.06 μm Single-Photon Avalanche Diode Pixel with Embedded Metal Contact and Power Grid on Deep Trench Pixel Isolation for High-Resolution Photon Counting † Ogi, Jun Sano, Fumiaki Nakata, Tatsuya Kubo, Yoshiki Onishi, Wataru Koswaththage, Charith Mochizuki, Takeya Tashiro, Yoshiaki Hizu, Kazuki Takatsuka, Takafumi Watanabe, Iori Koga, Fumihiko Hirano, Tomoyuki Oike, Yusuke Sensors (Basel) Article In this study, a 3.06 μm pitch single-photon avalanche diode (SPAD) pixel with an embedded metal contact and power grid on two-step deep trench isolation in the pixel is presented. The embedded metal contact can suppress edge breakdown and reduce the dark count rate to 15.8 cps with the optimized potential design. The embedded metal for the contact is also used as an optical shield and a low crosstalk probability of 0.4% is achieved, while the photon detection efficiency is as high as 57%. In addition, the integration of a power grid and the polysilicon resistor on SPAD pixels can help to reduce the voltage drop in anode power supply and reduce the power consumption with SPAD multiplication, respectively, in a large SPAD pixel array for a high-resolution photon-counting image sensor. MDPI 2023-11-01 /pmc/articles/PMC10648928/ /pubmed/37960605 http://dx.doi.org/10.3390/s23218906 Text en © 2023 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Ogi, Jun
Sano, Fumiaki
Nakata, Tatsuya
Kubo, Yoshiki
Onishi, Wataru
Koswaththage, Charith
Mochizuki, Takeya
Tashiro, Yoshiaki
Hizu, Kazuki
Takatsuka, Takafumi
Watanabe, Iori
Koga, Fumihiko
Hirano, Tomoyuki
Oike, Yusuke
A 3.06 μm Single-Photon Avalanche Diode Pixel with Embedded Metal Contact and Power Grid on Deep Trench Pixel Isolation for High-Resolution Photon Counting †
title A 3.06 μm Single-Photon Avalanche Diode Pixel with Embedded Metal Contact and Power Grid on Deep Trench Pixel Isolation for High-Resolution Photon Counting †
title_full A 3.06 μm Single-Photon Avalanche Diode Pixel with Embedded Metal Contact and Power Grid on Deep Trench Pixel Isolation for High-Resolution Photon Counting †
title_fullStr A 3.06 μm Single-Photon Avalanche Diode Pixel with Embedded Metal Contact and Power Grid on Deep Trench Pixel Isolation for High-Resolution Photon Counting †
title_full_unstemmed A 3.06 μm Single-Photon Avalanche Diode Pixel with Embedded Metal Contact and Power Grid on Deep Trench Pixel Isolation for High-Resolution Photon Counting †
title_short A 3.06 μm Single-Photon Avalanche Diode Pixel with Embedded Metal Contact and Power Grid on Deep Trench Pixel Isolation for High-Resolution Photon Counting †
title_sort 3.06 μm single-photon avalanche diode pixel with embedded metal contact and power grid on deep trench pixel isolation for high-resolution photon counting †
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10648928/
https://www.ncbi.nlm.nih.gov/pubmed/37960605
http://dx.doi.org/10.3390/s23218906
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