A 3.06 μm Single-Photon Avalanche Diode Pixel with Embedded Metal Contact and Power Grid on Deep Trench Pixel Isolation for High-Resolution Photon Counting †

In this study, a 3.06 μm pitch single-photon avalanche diode (SPAD) pixel with an embedded metal contact and power grid on two-step deep trench isolation in the pixel is presented. The embedded metal contact can suppress edge breakdown and reduce the dark count rate to 15.8 cps with the optimized po...

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Detalles Bibliográficos
Autores principales: Ogi, Jun, Sano, Fumiaki, Nakata, Tatsuya, Kubo, Yoshiki, Onishi, Wataru, Koswaththage, Charith, Mochizuki, Takeya, Tashiro, Yoshiaki, Hizu, Kazuki, Takatsuka, Takafumi, Watanabe, Iori, Koga, Fumihiko, Hirano, Tomoyuki, Oike, Yusuke
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10648928/
https://www.ncbi.nlm.nih.gov/pubmed/37960605
http://dx.doi.org/10.3390/s23218906

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