Integrated Logic Circuits Based on Wafer-Scale 2D-MoS(2) FETs Using Buried-Gate Structures

Two-dimensional (2D) transition-metal dichalcogenides (TMDs) materials, such as molybdenum disulfide (MoS(2)), stand out due to their atomically thin layered structure and exceptional electrical properties. Consequently, they could potentially become one of the main materials for future integrated h...

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Detalles Bibliográficos
Autores principales: Lee, Ju-Ah, Yoon, Jongwon, Hwang, Seungkwon, Hwang, Hyunsang, Kwon, Jung-Dae, Lee, Seung-Ki, Kim, Yonghun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10649149/
https://www.ncbi.nlm.nih.gov/pubmed/37947714
http://dx.doi.org/10.3390/nano13212870

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10649149/
https://www.ncbi.nlm.nih.gov/pubmed/37947714
http://dx.doi.org/10.3390/nano13212870

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