Nanotribological Characteristics of the Al Content of Al(x)Ga(1−x)N Epitaxial Films

The nanotribological properties of aluminum gallium nitride (Al(x)Ga(1−x)N) epitaxial films grown on low-temperature-grown GaN/AlN/Si substrates were investigated using a nanoscratch system. It was confirmed that the Al compositions played an important role, which was directly influencing the streng...

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Detalles Bibliográficos
Autores principales: Wen, Hua-Chiang, Wu, Ssu-Kuan, Liu, Cheng-Wei, Dai, Jin-Ji, Chou, Wu-Ching
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10650391/
https://www.ncbi.nlm.nih.gov/pubmed/37947729
http://dx.doi.org/10.3390/nano13212884

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10650391/
https://www.ncbi.nlm.nih.gov/pubmed/37947729
http://dx.doi.org/10.3390/nano13212884

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