Influence of Different Carrier Gases, Temperature, and Partial Pressure on Growth Dynamics of Ge and Si Nanowires

The broad and fascinating properties of nanowires and their synthesis have attracted great attention as building blocks for functional devices at the nanoscale. Silicon and germanium are highly interesting materials due to their compatibility with standard CMOS technology. Their combination provides...

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Detalles Bibliográficos
Autores principales: Forrer, Nicolas, Nigro, Arianna, Gadea, Gerard, Zardo, Ilaria
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10650493/
https://www.ncbi.nlm.nih.gov/pubmed/37947724
http://dx.doi.org/10.3390/nano13212879

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10650493/
https://www.ncbi.nlm.nih.gov/pubmed/37947724
http://dx.doi.org/10.3390/nano13212879

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