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Influence of Different Carrier Gases, Temperature, and Partial Pressure on Growth Dynamics of Ge and Si Nanowires
The broad and fascinating properties of nanowires and their synthesis have attracted great attention as building blocks for functional devices at the nanoscale. Silicon and germanium are highly interesting materials due to their compatibility with standard CMOS technology. Their combination provides...
| Autores principales: | , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2023
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10650493/ https://www.ncbi.nlm.nih.gov/pubmed/37947724 http://dx.doi.org/10.3390/nano13212879 |