Improved Resistive and Synaptic Characteristics in Neuromorphic Systems Achieved Using the Double-Forming Process

In this study, we investigate the electrical properties of ITO/ZrO(x)/TaN RRAM devices for neuromorphic computing applications. The thickness and material composition of the device are analyzed using transmission electron microscopy. Additionally, the existence of TaON interface layers was confirmed...

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Detalles Bibliográficos
Autores principales: Kim, Minkang, Ju, Dongyeol, Kang, Myounggon, Kim, Sungjun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10650609/
https://www.ncbi.nlm.nih.gov/pubmed/37947704
http://dx.doi.org/10.3390/nano13212859

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10650609/
https://www.ncbi.nlm.nih.gov/pubmed/37947704
http://dx.doi.org/10.3390/nano13212859

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