Phase Change-Induced Magnetic Switching through Metal–Insulator Transition in VO(2)/TbFeCo Films

The ability to manipulate spins in magnetic materials is essential in designing spintronics devices. One method for magnetic switching is through strain. In VO [Formula: see text] on TiO [Formula: see text] thin films, while VO [Formula: see text] remains rutile across the metal–insulator transition...

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Detalles Bibliográficos
Autores principales: Ma, Chung T., Kittiwatanakul, Salinporn, Sittipongpittaya, Apiprach, Wang, Yuhan, Morshed, Md Golam, Ghosh, Avik W., Poon, S. Joseph
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10650912/
https://www.ncbi.nlm.nih.gov/pubmed/37947693
http://dx.doi.org/10.3390/nano13212848

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10650912/
https://www.ncbi.nlm.nih.gov/pubmed/37947693
http://dx.doi.org/10.3390/nano13212848

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