Out-of-plane ferroelectricity and robust magnetoelectricity in quasi-two-dimensional materials

Thin-film ferroelectrics have been pursued for capacitive and nonvolatile memory devices. They rely on polarizations that are oriented in an out-of-plane direction to facilitate integration and addressability with complementary metal-oxide semiconductor architectures. The internal depolarization fie...

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Detalles Bibliográficos
Autores principales: Lu, Xue-Zeng, Zhang, Hui-Min, Zhou, Ying, Zhu, Tong, Xiang, Hongjun, Dong, Shuai, Kageyama, Hiroshi, Rondinelli, James M.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Association for the Advancement of Science 2023
Materias:
Physical and Materials Sciences
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10665001/
https://www.ncbi.nlm.nih.gov/pubmed/37992171
http://dx.doi.org/10.1126/sciadv.adi0138

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10665001/
https://www.ncbi.nlm.nih.gov/pubmed/37992171
http://dx.doi.org/10.1126/sciadv.adi0138

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