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Out-of-plane ferroelectricity and robust magnetoelectricity in quasi-two-dimensional materials
Thin-film ferroelectrics have been pursued for capacitive and nonvolatile memory devices. They rely on polarizations that are oriented in an out-of-plane direction to facilitate integration and addressability with complementary metal-oxide semiconductor architectures. The internal depolarization fie...
Autores principales: | Lu, Xue-Zeng, Zhang, Hui-Min, Zhou, Ying, Zhu, Tong, Xiang, Hongjun, Dong, Shuai, Kageyama, Hiroshi, Rondinelli, James M. |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
American Association for the Advancement of Science
2023
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10665001/ https://www.ncbi.nlm.nih.gov/pubmed/37992171 http://dx.doi.org/10.1126/sciadv.adi0138 |
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