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Properties of tin oxide films grown by atomic layer deposition from tin tetraiodide and ozone
Polycrystalline SnO(2) thin films were grown by atomic layer deposition (ALD) on SiO(2)/Si(100) substrates from SnI(4) and O(3). Suitable evaporation temperatures for the SnI(4) precursor as well as the relationship between growth per cycle and substrate temperature were determined. Crystal growth i...
| Autores principales: | , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Beilstein-Institut
2023
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10667712/ https://www.ncbi.nlm.nih.gov/pubmed/38025197 http://dx.doi.org/10.3762/bjnano.14.89 |