Properties of tin oxide films grown by atomic layer deposition from tin tetraiodide and ozone

Polycrystalline SnO(2) thin films were grown by atomic layer deposition (ALD) on SiO(2)/Si(100) substrates from SnI(4) and O(3). Suitable evaporation temperatures for the SnI(4) precursor as well as the relationship between growth per cycle and substrate temperature were determined. Crystal growth i...

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Detalles Bibliográficos
Autores principales: Kalam, Kristjan, Ritslaid, Peeter, Käämbre, Tanel, Tamm, Aile, Kukli, Kaupo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Beilstein-Institut 2023
Materias:
Full Research Paper
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10667712/
https://www.ncbi.nlm.nih.gov/pubmed/38025197
http://dx.doi.org/10.3762/bjnano.14.89
Descripción
Sumario:Polycrystalline SnO(2) thin films were grown by atomic layer deposition (ALD) on SiO(2)/Si(100) substrates from SnI(4) and O(3). Suitable evaporation temperatures for the SnI(4) precursor as well as the relationship between growth per cycle and substrate temperature were determined. Crystal growth in the films in the temperature range of 225–600 °C was identified. Spectroscopic analyses revealed low amounts of residual iodine and implied the formation of single-phase oxide in the films grown at temperatures above 300 °C. Appropriateness of the mentioned precursor system to the preparation of SnO(2) films was established.

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