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Properties of tin oxide films grown by atomic layer deposition from tin tetraiodide and ozone
Polycrystalline SnO(2) thin films were grown by atomic layer deposition (ALD) on SiO(2)/Si(100) substrates from SnI(4) and O(3). Suitable evaporation temperatures for the SnI(4) precursor as well as the relationship between growth per cycle and substrate temperature were determined. Crystal growth i...
Autores principales: | , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Beilstein-Institut
2023
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10667712/ https://www.ncbi.nlm.nih.gov/pubmed/38025197 http://dx.doi.org/10.3762/bjnano.14.89 |
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author | Kalam, Kristjan Ritslaid, Peeter Käämbre, Tanel Tamm, Aile Kukli, Kaupo |
author_facet | Kalam, Kristjan Ritslaid, Peeter Käämbre, Tanel Tamm, Aile Kukli, Kaupo |
author_sort | Kalam, Kristjan |
collection | PubMed |
description | Polycrystalline SnO(2) thin films were grown by atomic layer deposition (ALD) on SiO(2)/Si(100) substrates from SnI(4) and O(3). Suitable evaporation temperatures for the SnI(4) precursor as well as the relationship between growth per cycle and substrate temperature were determined. Crystal growth in the films in the temperature range of 225–600 °C was identified. Spectroscopic analyses revealed low amounts of residual iodine and implied the formation of single-phase oxide in the films grown at temperatures above 300 °C. Appropriateness of the mentioned precursor system to the preparation of SnO(2) films was established. |
format | Online Article Text |
id | pubmed-10667712 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2023 |
publisher | Beilstein-Institut |
record_format | MEDLINE/PubMed |
spelling | pubmed-106677122023-11-13 Properties of tin oxide films grown by atomic layer deposition from tin tetraiodide and ozone Kalam, Kristjan Ritslaid, Peeter Käämbre, Tanel Tamm, Aile Kukli, Kaupo Beilstein J Nanotechnol Full Research Paper Polycrystalline SnO(2) thin films were grown by atomic layer deposition (ALD) on SiO(2)/Si(100) substrates from SnI(4) and O(3). Suitable evaporation temperatures for the SnI(4) precursor as well as the relationship between growth per cycle and substrate temperature were determined. Crystal growth in the films in the temperature range of 225–600 °C was identified. Spectroscopic analyses revealed low amounts of residual iodine and implied the formation of single-phase oxide in the films grown at temperatures above 300 °C. Appropriateness of the mentioned precursor system to the preparation of SnO(2) films was established. Beilstein-Institut 2023-11-13 /pmc/articles/PMC10667712/ /pubmed/38025197 http://dx.doi.org/10.3762/bjnano.14.89 Text en Copyright © 2023, Kalam et al. https://creativecommons.org/licenses/by/4.0/This is an open access article licensed under the terms of the Beilstein-Institut Open Access License Agreement (https://www.beilstein-journals.org/bjnano/terms/terms), which is identical to the Creative Commons Attribution 4.0 International License (https://creativecommons.org/licenses/by/4.0 (https://creativecommons.org/licenses/by/4.0/) ). The reuse of material under this license requires that the author(s), source and license are credited. Third-party material in this article could be subject to other licenses (typically indicated in the credit line), and in this case, users are required to obtain permission from the license holder to reuse the material. |
spellingShingle | Full Research Paper Kalam, Kristjan Ritslaid, Peeter Käämbre, Tanel Tamm, Aile Kukli, Kaupo Properties of tin oxide films grown by atomic layer deposition from tin tetraiodide and ozone |
title | Properties of tin oxide films grown by atomic layer deposition from tin tetraiodide and ozone |
title_full | Properties of tin oxide films grown by atomic layer deposition from tin tetraiodide and ozone |
title_fullStr | Properties of tin oxide films grown by atomic layer deposition from tin tetraiodide and ozone |
title_full_unstemmed | Properties of tin oxide films grown by atomic layer deposition from tin tetraiodide and ozone |
title_short | Properties of tin oxide films grown by atomic layer deposition from tin tetraiodide and ozone |
title_sort | properties of tin oxide films grown by atomic layer deposition from tin tetraiodide and ozone |
topic | Full Research Paper |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10667712/ https://www.ncbi.nlm.nih.gov/pubmed/38025197 http://dx.doi.org/10.3762/bjnano.14.89 |
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