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Properties of tin oxide films grown by atomic layer deposition from tin tetraiodide and ozone

Polycrystalline SnO(2) thin films were grown by atomic layer deposition (ALD) on SiO(2)/Si(100) substrates from SnI(4) and O(3). Suitable evaporation temperatures for the SnI(4) precursor as well as the relationship between growth per cycle and substrate temperature were determined. Crystal growth i...

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Detalles Bibliográficos
Autores principales:	Kalam, Kristjan, Ritslaid, Peeter, Käämbre, Tanel, Tamm, Aile, Kukli, Kaupo
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Beilstein-Institut 2023
Materias:	Full Research Paper
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10667712/ https://www.ncbi.nlm.nih.gov/pubmed/38025197 http://dx.doi.org/10.3762/bjnano.14.89

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