Exploring the Potential of GaN-Based Power HEMTs with Coherent Channel †

The GaN industry always demands further improvement in the power transport capability of GaN-based high-energy mobility transistors (HEMT). This paper presents a novel enhancement-type GaN HEMT with high power transmission capability, which utilizes a coherent channel that can form a three-dimension...

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Detalles Bibliográficos
Autores principales: Chen, Xinghuan, Wang, Fangzhou, Wang, Zeheng, Huang, Jing-Kai
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10672858/
https://www.ncbi.nlm.nih.gov/pubmed/38004899
http://dx.doi.org/10.3390/mi14112041

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10672858/
https://www.ncbi.nlm.nih.gov/pubmed/38004899
http://dx.doi.org/10.3390/mi14112041

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