An Improved Model of Single-Event Transients Based on Effective Space Charge for Metal–Oxide–Semiconductor Field-Effect Transistor

In this paper, a single-event transient model based on the effective space charge for MOSFETs is proposed. The physical process of deposited and moving charges is analyzed in detail. The influence of deposited charges on the electric field in the depletion region is investigated. The electric field...

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Detalles Bibliográficos
Autores principales: Zhang, Yutao, Lu, Hongliang, Liu, Chen, Zhang, Yuming, Yao, Ruxue, Liu, Xingming
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10672885/
https://www.ncbi.nlm.nih.gov/pubmed/38004942
http://dx.doi.org/10.3390/mi14112085

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10672885/
https://www.ncbi.nlm.nih.gov/pubmed/38004942
http://dx.doi.org/10.3390/mi14112085

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