Effects of Thermal Boundary Resistance on Thermal Management of Gallium-Nitride-Based Semiconductor Devices: A Review

Wide-bandgap gallium nitride (GaN)-based semiconductors offer significant advantages over traditional Si-based semiconductors in terms of high-power and high-frequency operations. As it has superior properties, such as high operating temperatures, high-frequency operation, high breakdown electric fi...

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Detalles Bibliográficos
Autores principales: Zhan, Tianzhuo, Xu, Mao, Cao, Zhi, Zheng, Chong, Kurita, Hiroki, Narita, Fumio, Wu, Yen-Ju, Xu, Yibin, Wang, Haidong, Song, Mengjie, Wang, Wei, Zhou, Yanguang, Liu, Xuqing, Shi, Yu, Jia, Yu, Guan, Sujun, Hanajiri, Tatsuro, Maekawa, Toru, Okino, Akitoshi, Watanabe, Takanobu
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Review
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10673006/
https://www.ncbi.nlm.nih.gov/pubmed/38004933
http://dx.doi.org/10.3390/mi14112076

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10673006/
https://www.ncbi.nlm.nih.gov/pubmed/38004933
http://dx.doi.org/10.3390/mi14112076

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