Effect of Noncircular Channel on Distribution of Threshold Voltage in 3D NAND Flash Memory

The instability in threshold voltage (V(TH)) and charge distributions in noncircular cells of three-dimensional (3D) NAND flash memory are investigated. Using TCAD simulation, we aim to identify the main factors influencing the V(TH) of noncircular cells. The key focus is on the nonuniform trapped e...

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Detalles Bibliográficos
Autores principales: Go, Donghyun, Yoon, Gilsang, Park, Jounghun, Kim, Donghwi, Kim, Jiwon, Kim, Jungsik, Lee, Jeong-Soo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10673099/
https://www.ncbi.nlm.nih.gov/pubmed/38004865
http://dx.doi.org/10.3390/mi14112007

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10673099/
https://www.ncbi.nlm.nih.gov/pubmed/38004865
http://dx.doi.org/10.3390/mi14112007

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