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Effect of Noncircular Channel on Distribution of Threshold Voltage in 3D NAND Flash Memory

The instability in threshold voltage (V(TH)) and charge distributions in noncircular cells of three-dimensional (3D) NAND flash memory are investigated. Using TCAD simulation, we aim to identify the main factors influencing the V(TH) of noncircular cells. The key focus is on the nonuniform trapped e...

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Autores principales: Go, Donghyun, Yoon, Gilsang, Park, Jounghun, Kim, Donghwi, Kim, Jiwon, Kim, Jungsik, Lee, Jeong-Soo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10673099/
https://www.ncbi.nlm.nih.gov/pubmed/38004865
http://dx.doi.org/10.3390/mi14112007
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author Go, Donghyun
Yoon, Gilsang
Park, Jounghun
Kim, Donghwi
Kim, Jiwon
Kim, Jungsik
Lee, Jeong-Soo
author_facet Go, Donghyun
Yoon, Gilsang
Park, Jounghun
Kim, Donghwi
Kim, Jiwon
Kim, Jungsik
Lee, Jeong-Soo
author_sort Go, Donghyun
collection PubMed
description The instability in threshold voltage (V(TH)) and charge distributions in noncircular cells of three-dimensional (3D) NAND flash memory are investigated. Using TCAD simulation, we aim to identify the main factors influencing the V(TH) of noncircular cells. The key focus is on the nonuniform trapped electron density in the charge trapping layer (CTL) caused by the change in electric field between the circular region and the spike region. There are less-trapped electron (LT) regions within the CTL of programmed noncircular cells, which significantly enhances current flow. Remarkably, more than 50% of the total current flows through these LT regions when the spike size reaches 15 nm. We also performed a comprehensive analysis of the relationship between charge distribution and V(TH) in two-spike cells with different heights (H(Spike)) and angles between spikes (θ). The results of this study demonstrate the potential to improve the reliability of next-generation 3D NAND flash memory.
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spelling pubmed-106730992023-10-28 Effect of Noncircular Channel on Distribution of Threshold Voltage in 3D NAND Flash Memory Go, Donghyun Yoon, Gilsang Park, Jounghun Kim, Donghwi Kim, Jiwon Kim, Jungsik Lee, Jeong-Soo Micromachines (Basel) Article The instability in threshold voltage (V(TH)) and charge distributions in noncircular cells of three-dimensional (3D) NAND flash memory are investigated. Using TCAD simulation, we aim to identify the main factors influencing the V(TH) of noncircular cells. The key focus is on the nonuniform trapped electron density in the charge trapping layer (CTL) caused by the change in electric field between the circular region and the spike region. There are less-trapped electron (LT) regions within the CTL of programmed noncircular cells, which significantly enhances current flow. Remarkably, more than 50% of the total current flows through these LT regions when the spike size reaches 15 nm. We also performed a comprehensive analysis of the relationship between charge distribution and V(TH) in two-spike cells with different heights (H(Spike)) and angles between spikes (θ). The results of this study demonstrate the potential to improve the reliability of next-generation 3D NAND flash memory. MDPI 2023-10-28 /pmc/articles/PMC10673099/ /pubmed/38004865 http://dx.doi.org/10.3390/mi14112007 Text en © 2023 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Go, Donghyun
Yoon, Gilsang
Park, Jounghun
Kim, Donghwi
Kim, Jiwon
Kim, Jungsik
Lee, Jeong-Soo
Effect of Noncircular Channel on Distribution of Threshold Voltage in 3D NAND Flash Memory
title Effect of Noncircular Channel on Distribution of Threshold Voltage in 3D NAND Flash Memory
title_full Effect of Noncircular Channel on Distribution of Threshold Voltage in 3D NAND Flash Memory
title_fullStr Effect of Noncircular Channel on Distribution of Threshold Voltage in 3D NAND Flash Memory
title_full_unstemmed Effect of Noncircular Channel on Distribution of Threshold Voltage in 3D NAND Flash Memory
title_short Effect of Noncircular Channel on Distribution of Threshold Voltage in 3D NAND Flash Memory
title_sort effect of noncircular channel on distribution of threshold voltage in 3d nand flash memory
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10673099/
https://www.ncbi.nlm.nih.gov/pubmed/38004865
http://dx.doi.org/10.3390/mi14112007
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