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Effect of Noncircular Channel on Distribution of Threshold Voltage in 3D NAND Flash Memory
The instability in threshold voltage (V(TH)) and charge distributions in noncircular cells of three-dimensional (3D) NAND flash memory are investigated. Using TCAD simulation, we aim to identify the main factors influencing the V(TH) of noncircular cells. The key focus is on the nonuniform trapped e...
Autores principales: | , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2023
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10673099/ https://www.ncbi.nlm.nih.gov/pubmed/38004865 http://dx.doi.org/10.3390/mi14112007 |
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author | Go, Donghyun Yoon, Gilsang Park, Jounghun Kim, Donghwi Kim, Jiwon Kim, Jungsik Lee, Jeong-Soo |
author_facet | Go, Donghyun Yoon, Gilsang Park, Jounghun Kim, Donghwi Kim, Jiwon Kim, Jungsik Lee, Jeong-Soo |
author_sort | Go, Donghyun |
collection | PubMed |
description | The instability in threshold voltage (V(TH)) and charge distributions in noncircular cells of three-dimensional (3D) NAND flash memory are investigated. Using TCAD simulation, we aim to identify the main factors influencing the V(TH) of noncircular cells. The key focus is on the nonuniform trapped electron density in the charge trapping layer (CTL) caused by the change in electric field between the circular region and the spike region. There are less-trapped electron (LT) regions within the CTL of programmed noncircular cells, which significantly enhances current flow. Remarkably, more than 50% of the total current flows through these LT regions when the spike size reaches 15 nm. We also performed a comprehensive analysis of the relationship between charge distribution and V(TH) in two-spike cells with different heights (H(Spike)) and angles between spikes (θ). The results of this study demonstrate the potential to improve the reliability of next-generation 3D NAND flash memory. |
format | Online Article Text |
id | pubmed-10673099 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2023 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-106730992023-10-28 Effect of Noncircular Channel on Distribution of Threshold Voltage in 3D NAND Flash Memory Go, Donghyun Yoon, Gilsang Park, Jounghun Kim, Donghwi Kim, Jiwon Kim, Jungsik Lee, Jeong-Soo Micromachines (Basel) Article The instability in threshold voltage (V(TH)) and charge distributions in noncircular cells of three-dimensional (3D) NAND flash memory are investigated. Using TCAD simulation, we aim to identify the main factors influencing the V(TH) of noncircular cells. The key focus is on the nonuniform trapped electron density in the charge trapping layer (CTL) caused by the change in electric field between the circular region and the spike region. There are less-trapped electron (LT) regions within the CTL of programmed noncircular cells, which significantly enhances current flow. Remarkably, more than 50% of the total current flows through these LT regions when the spike size reaches 15 nm. We also performed a comprehensive analysis of the relationship between charge distribution and V(TH) in two-spike cells with different heights (H(Spike)) and angles between spikes (θ). The results of this study demonstrate the potential to improve the reliability of next-generation 3D NAND flash memory. MDPI 2023-10-28 /pmc/articles/PMC10673099/ /pubmed/38004865 http://dx.doi.org/10.3390/mi14112007 Text en © 2023 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Article Go, Donghyun Yoon, Gilsang Park, Jounghun Kim, Donghwi Kim, Jiwon Kim, Jungsik Lee, Jeong-Soo Effect of Noncircular Channel on Distribution of Threshold Voltage in 3D NAND Flash Memory |
title | Effect of Noncircular Channel on Distribution of Threshold Voltage in 3D NAND Flash Memory |
title_full | Effect of Noncircular Channel on Distribution of Threshold Voltage in 3D NAND Flash Memory |
title_fullStr | Effect of Noncircular Channel on Distribution of Threshold Voltage in 3D NAND Flash Memory |
title_full_unstemmed | Effect of Noncircular Channel on Distribution of Threshold Voltage in 3D NAND Flash Memory |
title_short | Effect of Noncircular Channel on Distribution of Threshold Voltage in 3D NAND Flash Memory |
title_sort | effect of noncircular channel on distribution of threshold voltage in 3d nand flash memory |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10673099/ https://www.ncbi.nlm.nih.gov/pubmed/38004865 http://dx.doi.org/10.3390/mi14112007 |
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