Comprehensive Comparison of MOCVD- and LPCVD-SiN(x) Surface Passivation for AlGaN/GaN HEMTs for 5G RF Applications

Passivation is commonly used to suppress current collapse in AlGaN/GaN HEMTs. However, the conventional PECV-fabricated SiN(x) passivation layer is incompatible with the latest process, like the “passivation-prior-to-ohmic” method. Research attention has therefore turned to high-temperature passivat...

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Detalles Bibliográficos
Autores principales: Deng, Longge, Zhou, Likun, Lu, Hao, Yang, Ling, Yu, Qian, Zhang, Meng, Wu, Mei, Hou, Bin, Ma, Xiaohua, Hao, Yue
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10673131/
https://www.ncbi.nlm.nih.gov/pubmed/38004961
http://dx.doi.org/10.3390/mi14112104

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10673131/
https://www.ncbi.nlm.nih.gov/pubmed/38004961
http://dx.doi.org/10.3390/mi14112104

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