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Endpoint Detection Based on Optical Method in Chemical Mechanical Polishing

Endpoint detection is an important technology in chemical mechanical polishing (CMP), which is used to capture the material interface and compensate the variations of consumables and incoming wafer thickness. This paper aimed to apply optical detection in metal CMP. An in situ optical measurement sy...

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Detalles Bibliográficos
Autores principales: Tian, Fangxin, Wang, Tongqing, Lu, Xinchun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10673209/
https://www.ncbi.nlm.nih.gov/pubmed/38004910
http://dx.doi.org/10.3390/mi14112053
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author Tian, Fangxin
Wang, Tongqing
Lu, Xinchun
author_facet Tian, Fangxin
Wang, Tongqing
Lu, Xinchun
author_sort Tian, Fangxin
collection PubMed
description Endpoint detection is an important technology in chemical mechanical polishing (CMP), which is used to capture the material interface and compensate the variations of consumables and incoming wafer thickness. This paper aimed to apply optical detection in metal CMP. An in situ optical measurement system was developed for a 12-inch CMP tool. Kinematic analysis of the scanning trajectory of the laser device indicated the relative position relationship between the device and the wafer. Average optical data within the wafer described the material removal of metal CMP. Furthermore, optical data and location described the non-uniformity of the entire wafer surface. In this research, the polishing condition and the residual of the wafer edge are characterized by optical trace. Pauta Criterion is used to discriminate the inflexion point of the material interface. The results reveal that the interface capture is accurate and effective.
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spelling pubmed-106732092023-11-02 Endpoint Detection Based on Optical Method in Chemical Mechanical Polishing Tian, Fangxin Wang, Tongqing Lu, Xinchun Micromachines (Basel) Article Endpoint detection is an important technology in chemical mechanical polishing (CMP), which is used to capture the material interface and compensate the variations of consumables and incoming wafer thickness. This paper aimed to apply optical detection in metal CMP. An in situ optical measurement system was developed for a 12-inch CMP tool. Kinematic analysis of the scanning trajectory of the laser device indicated the relative position relationship between the device and the wafer. Average optical data within the wafer described the material removal of metal CMP. Furthermore, optical data and location described the non-uniformity of the entire wafer surface. In this research, the polishing condition and the residual of the wafer edge are characterized by optical trace. Pauta Criterion is used to discriminate the inflexion point of the material interface. The results reveal that the interface capture is accurate and effective. MDPI 2023-11-02 /pmc/articles/PMC10673209/ /pubmed/38004910 http://dx.doi.org/10.3390/mi14112053 Text en © 2023 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Tian, Fangxin
Wang, Tongqing
Lu, Xinchun
Endpoint Detection Based on Optical Method in Chemical Mechanical Polishing
title Endpoint Detection Based on Optical Method in Chemical Mechanical Polishing
title_full Endpoint Detection Based on Optical Method in Chemical Mechanical Polishing
title_fullStr Endpoint Detection Based on Optical Method in Chemical Mechanical Polishing
title_full_unstemmed Endpoint Detection Based on Optical Method in Chemical Mechanical Polishing
title_short Endpoint Detection Based on Optical Method in Chemical Mechanical Polishing
title_sort endpoint detection based on optical method in chemical mechanical polishing
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10673209/
https://www.ncbi.nlm.nih.gov/pubmed/38004910
http://dx.doi.org/10.3390/mi14112053
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