A High-Performance InGaAs Vertical Electron–Hole Bilayer Tunnel Field Effect Transistor with P(+)-Pocket and InAlAs-Block

To give consideration to both chip density and device performance, an In(0.53)Ga(0.47)As vertical electron–hole bilayer tunnel field effect transistor (EHBTFET) with a P(+)-pocket and an In(0.52)Al(0.48)As-block (VPB-EHBTFET) is introduced and systematically studied by TCAD simulation. The introduct...

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Detalles Bibliográficos
Autores principales: Liu, Hu, Li, Peifeng, Zhou, Xiaoyu, Wang, Pengyu, Li, Yubin, Pan, Lei, Zhang, Wenting, Li, Yao
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10673255/
https://www.ncbi.nlm.nih.gov/pubmed/38004905
http://dx.doi.org/10.3390/mi14112049

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10673255/
https://www.ncbi.nlm.nih.gov/pubmed/38004905
http://dx.doi.org/10.3390/mi14112049

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