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A High-Performance InGaAs Vertical Electron–Hole Bilayer Tunnel Field Effect Transistor with P(+)-Pocket and InAlAs-Block
To give consideration to both chip density and device performance, an In(0.53)Ga(0.47)As vertical electron–hole bilayer tunnel field effect transistor (EHBTFET) with a P(+)-pocket and an In(0.52)Al(0.48)As-block (VPB-EHBTFET) is introduced and systematically studied by TCAD simulation. The introduct...
| Autores principales: | , , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2023
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10673255/ https://www.ncbi.nlm.nih.gov/pubmed/38004905 http://dx.doi.org/10.3390/mi14112049 |