Trap Characterization Techniques for GaN-Based HEMTs: A Critical Review

Gallium nitride (GaN) high-electron-mobility transistors (HEMTs) have been considered promising candidates for power devices due to their superior advantages of high current density, high breakdown voltage, high power density, and high-frequency operations. However, the development of GaN HEMTs has...

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Detalles Bibliográficos
Autores principales: Zou, Xiazhi, Yang, Jiayi, Qiao, Qifeng, Zou, Xinbo, Chen, Jiaxiang, Shi, Yang, Ren, Kailin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Review
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10673358/
https://www.ncbi.nlm.nih.gov/pubmed/38004901
http://dx.doi.org/10.3390/mi14112044

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10673358/
https://www.ncbi.nlm.nih.gov/pubmed/38004901
http://dx.doi.org/10.3390/mi14112044

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