Hexagonal Boron Nitride as an Intermediate Layer for Gallium Nitride Epitaxial Growth in Near-Ultraviolet Light-Emitting Diodes

We introduce the development of gallium nitride (GaN) layers by employing graphene and hexagonal boron nitride (h-BN) as intermediary substrates. This study demonstrated the successful growth of GaN with a uniformly smooth surface morphology on h-BN. In order to evaluate the crystallinity of GaN gro...

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Detalles Bibliográficos
Autores principales: Park, Ah-Hyun, Seo, Tae-Hoon
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10673368/
https://www.ncbi.nlm.nih.gov/pubmed/38005145
http://dx.doi.org/10.3390/ma16227216

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10673368/
https://www.ncbi.nlm.nih.gov/pubmed/38005145
http://dx.doi.org/10.3390/ma16227216

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