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Hexagonal Boron Nitride as an Intermediate Layer for Gallium Nitride Epitaxial Growth in Near-Ultraviolet Light-Emitting Diodes
We introduce the development of gallium nitride (GaN) layers by employing graphene and hexagonal boron nitride (h-BN) as intermediary substrates. This study demonstrated the successful growth of GaN with a uniformly smooth surface morphology on h-BN. In order to evaluate the crystallinity of GaN gro...
| Autores principales: | , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
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MDPI
2023
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10673368/ https://www.ncbi.nlm.nih.gov/pubmed/38005145 http://dx.doi.org/10.3390/ma16227216 |