RF Characterization of GaAs HBT under Load Mismatch with Reverse Wave Injection Technique

RF PAs need to be reliable enough to protect them from damage under load mismatch conditions. This paper investigated the characteristics of GaAs heterojunction bipolar transistors (HBTs) under load mismatch conditions using a novel reverse wave injection technique to realize large VSWR ruggedness m...

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Detalles Bibliográficos
Autores principales: Xu, Yidong, Tong, Yuxiu, Su, Jiangtao
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10673382/
https://www.ncbi.nlm.nih.gov/pubmed/38004915
http://dx.doi.org/10.3390/mi14112058

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10673382/
https://www.ncbi.nlm.nih.gov/pubmed/38004915
http://dx.doi.org/10.3390/mi14112058

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