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RF Characterization of GaAs HBT under Load Mismatch with Reverse Wave Injection Technique
RF PAs need to be reliable enough to protect them from damage under load mismatch conditions. This paper investigated the characteristics of GaAs heterojunction bipolar transistors (HBTs) under load mismatch conditions using a novel reverse wave injection technique to realize large VSWR ruggedness m...
Autores principales: | , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2023
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10673382/ https://www.ncbi.nlm.nih.gov/pubmed/38004915 http://dx.doi.org/10.3390/mi14112058 |
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author | Xu, Yidong Tong, Yuxiu Su, Jiangtao |
author_facet | Xu, Yidong Tong, Yuxiu Su, Jiangtao |
author_sort | Xu, Yidong |
collection | PubMed |
description | RF PAs need to be reliable enough to protect them from damage under load mismatch conditions. This paper investigated the characteristics of GaAs heterojunction bipolar transistors (HBTs) under load mismatch conditions using a novel reverse wave injection technique to realize large VSWR ruggedness measurement with the circle centered at 50 Ohm and optimal impedance separately to analyze the device in real applications. With a real-time waveform measurement system, the RF voltage and current waveform information can be acquired, which provide a more-accurate view of what is occurring at the current generator plane of the HBT device. Thereby, the potential failure mechanisms and load impedance can be identified to design the most-suitable PA circuits in communication systems. |
format | Online Article Text |
id | pubmed-10673382 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2023 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-106733822023-11-03 RF Characterization of GaAs HBT under Load Mismatch with Reverse Wave Injection Technique Xu, Yidong Tong, Yuxiu Su, Jiangtao Micromachines (Basel) Article RF PAs need to be reliable enough to protect them from damage under load mismatch conditions. This paper investigated the characteristics of GaAs heterojunction bipolar transistors (HBTs) under load mismatch conditions using a novel reverse wave injection technique to realize large VSWR ruggedness measurement with the circle centered at 50 Ohm and optimal impedance separately to analyze the device in real applications. With a real-time waveform measurement system, the RF voltage and current waveform information can be acquired, which provide a more-accurate view of what is occurring at the current generator plane of the HBT device. Thereby, the potential failure mechanisms and load impedance can be identified to design the most-suitable PA circuits in communication systems. MDPI 2023-11-03 /pmc/articles/PMC10673382/ /pubmed/38004915 http://dx.doi.org/10.3390/mi14112058 Text en © 2023 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Article Xu, Yidong Tong, Yuxiu Su, Jiangtao RF Characterization of GaAs HBT under Load Mismatch with Reverse Wave Injection Technique |
title | RF Characterization of GaAs HBT under Load Mismatch with Reverse Wave Injection Technique |
title_full | RF Characterization of GaAs HBT under Load Mismatch with Reverse Wave Injection Technique |
title_fullStr | RF Characterization of GaAs HBT under Load Mismatch with Reverse Wave Injection Technique |
title_full_unstemmed | RF Characterization of GaAs HBT under Load Mismatch with Reverse Wave Injection Technique |
title_short | RF Characterization of GaAs HBT under Load Mismatch with Reverse Wave Injection Technique |
title_sort | rf characterization of gaas hbt under load mismatch with reverse wave injection technique |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10673382/ https://www.ncbi.nlm.nih.gov/pubmed/38004915 http://dx.doi.org/10.3390/mi14112058 |
work_keys_str_mv | AT xuyidong rfcharacterizationofgaashbtunderloadmismatchwithreversewaveinjectiontechnique AT tongyuxiu rfcharacterizationofgaashbtunderloadmismatchwithreversewaveinjectiontechnique AT sujiangtao rfcharacterizationofgaashbtunderloadmismatchwithreversewaveinjectiontechnique |