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RF Characterization of GaAs HBT under Load Mismatch with Reverse Wave Injection Technique
RF PAs need to be reliable enough to protect them from damage under load mismatch conditions. This paper investigated the characteristics of GaAs heterojunction bipolar transistors (HBTs) under load mismatch conditions using a novel reverse wave injection technique to realize large VSWR ruggedness m...
| Autores principales: | , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2023
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10673382/ https://www.ncbi.nlm.nih.gov/pubmed/38004915 http://dx.doi.org/10.3390/mi14112058 |