Compact Physics Hot-Carrier Degradation Model Valid over a Wide Bias Range

We develop a compact physics model for hot-carrier degradation (HCD) that is valid over a wide range of gate and drain voltages ([Formula: see text]  and  [Formula: see text] , respectively). Special attention is paid to the contribution of secondary carriers (generated by impact ionization) to HCD,...

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Detalles Bibliográficos
Autores principales: Tyaginov, Stanislav, Bury, Erik, Grill, Alexander, Yu, Zhuoqing, Makarov, Alexander, De Keersgieter, An, Vexler, Mikhail, Vandemaele, Michiel, Wang, Runsheng, Spessot, Alessio, Chasin, Adrian, Kaczer, Ben
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10673430/
https://www.ncbi.nlm.nih.gov/pubmed/38004876
http://dx.doi.org/10.3390/mi14112018

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10673430/
https://www.ncbi.nlm.nih.gov/pubmed/38004876
http://dx.doi.org/10.3390/mi14112018

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