Compact Physics Hot-Carrier Degradation Model Valid over a Wide Bias Range

We develop a compact physics model for hot-carrier degradation (HCD) that is valid over a wide range of gate and drain voltages ([Formula: see text] and [Formula: see text] , respectively). Special attention is paid to the contribution of secondary carriers (generated by impact ionization) to HCD, which was shown to be significant under stress conditions with low [Formula: see text] and relatively high [Formula: see text]. Implementation of this contribution is based on refined modeling of carrier transport for both primary and secondary carriers. To validate the model, we employ foundry-quality n-channel transistors and a broad range of stress voltages [Formula: see text].