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Compact Physics Hot-Carrier Degradation Model Valid over a Wide Bias Range
We develop a compact physics model for hot-carrier degradation (HCD) that is valid over a wide range of gate and drain voltages ([Formula: see text] and [Formula: see text] , respectively). Special attention is paid to the contribution of secondary carriers (generated by impact ionization) to HCD,...
Autores principales: | , , , , , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2023
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10673430/ https://www.ncbi.nlm.nih.gov/pubmed/38004876 http://dx.doi.org/10.3390/mi14112018 |
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author | Tyaginov, Stanislav Bury, Erik Grill, Alexander Yu, Zhuoqing Makarov, Alexander De Keersgieter, An Vexler, Mikhail Vandemaele, Michiel Wang, Runsheng Spessot, Alessio Chasin, Adrian Kaczer, Ben |
author_facet | Tyaginov, Stanislav Bury, Erik Grill, Alexander Yu, Zhuoqing Makarov, Alexander De Keersgieter, An Vexler, Mikhail Vandemaele, Michiel Wang, Runsheng Spessot, Alessio Chasin, Adrian Kaczer, Ben |
author_sort | Tyaginov, Stanislav |
collection | PubMed |
description | We develop a compact physics model for hot-carrier degradation (HCD) that is valid over a wide range of gate and drain voltages ([Formula: see text] and [Formula: see text] , respectively). Special attention is paid to the contribution of secondary carriers (generated by impact ionization) to HCD, which was shown to be significant under stress conditions with low [Formula: see text] and relatively high [Formula: see text]. Implementation of this contribution is based on refined modeling of carrier transport for both primary and secondary carriers. To validate the model, we employ foundry-quality n-channel transistors and a broad range of stress voltages [Formula: see text]. |
format | Online Article Text |
id | pubmed-10673430 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2023 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-106734302023-10-30 Compact Physics Hot-Carrier Degradation Model Valid over a Wide Bias Range Tyaginov, Stanislav Bury, Erik Grill, Alexander Yu, Zhuoqing Makarov, Alexander De Keersgieter, An Vexler, Mikhail Vandemaele, Michiel Wang, Runsheng Spessot, Alessio Chasin, Adrian Kaczer, Ben Micromachines (Basel) Article We develop a compact physics model for hot-carrier degradation (HCD) that is valid over a wide range of gate and drain voltages ([Formula: see text] and [Formula: see text] , respectively). Special attention is paid to the contribution of secondary carriers (generated by impact ionization) to HCD, which was shown to be significant under stress conditions with low [Formula: see text] and relatively high [Formula: see text]. Implementation of this contribution is based on refined modeling of carrier transport for both primary and secondary carriers. To validate the model, we employ foundry-quality n-channel transistors and a broad range of stress voltages [Formula: see text]. MDPI 2023-10-30 /pmc/articles/PMC10673430/ /pubmed/38004876 http://dx.doi.org/10.3390/mi14112018 Text en © 2023 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Article Tyaginov, Stanislav Bury, Erik Grill, Alexander Yu, Zhuoqing Makarov, Alexander De Keersgieter, An Vexler, Mikhail Vandemaele, Michiel Wang, Runsheng Spessot, Alessio Chasin, Adrian Kaczer, Ben Compact Physics Hot-Carrier Degradation Model Valid over a Wide Bias Range |
title | Compact Physics Hot-Carrier Degradation Model Valid over a Wide Bias Range |
title_full | Compact Physics Hot-Carrier Degradation Model Valid over a Wide Bias Range |
title_fullStr | Compact Physics Hot-Carrier Degradation Model Valid over a Wide Bias Range |
title_full_unstemmed | Compact Physics Hot-Carrier Degradation Model Valid over a Wide Bias Range |
title_short | Compact Physics Hot-Carrier Degradation Model Valid over a Wide Bias Range |
title_sort | compact physics hot-carrier degradation model valid over a wide bias range |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10673430/ https://www.ncbi.nlm.nih.gov/pubmed/38004876 http://dx.doi.org/10.3390/mi14112018 |
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