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Compact Physics Hot-Carrier Degradation Model Valid over a Wide Bias Range

We develop a compact physics model for hot-carrier degradation (HCD) that is valid over a wide range of gate and drain voltages ([Formula: see text]  and  [Formula: see text] , respectively). Special attention is paid to the contribution of secondary carriers (generated by impact ionization) to HCD,...

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Autores principales: Tyaginov, Stanislav, Bury, Erik, Grill, Alexander, Yu, Zhuoqing, Makarov, Alexander, De Keersgieter, An, Vexler, Mikhail, Vandemaele, Michiel, Wang, Runsheng, Spessot, Alessio, Chasin, Adrian, Kaczer, Ben
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10673430/
https://www.ncbi.nlm.nih.gov/pubmed/38004876
http://dx.doi.org/10.3390/mi14112018
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author Tyaginov, Stanislav
Bury, Erik
Grill, Alexander
Yu, Zhuoqing
Makarov, Alexander
De Keersgieter, An
Vexler, Mikhail
Vandemaele, Michiel
Wang, Runsheng
Spessot, Alessio
Chasin, Adrian
Kaczer, Ben
author_facet Tyaginov, Stanislav
Bury, Erik
Grill, Alexander
Yu, Zhuoqing
Makarov, Alexander
De Keersgieter, An
Vexler, Mikhail
Vandemaele, Michiel
Wang, Runsheng
Spessot, Alessio
Chasin, Adrian
Kaczer, Ben
author_sort Tyaginov, Stanislav
collection PubMed
description We develop a compact physics model for hot-carrier degradation (HCD) that is valid over a wide range of gate and drain voltages ([Formula: see text]  and  [Formula: see text] , respectively). Special attention is paid to the contribution of secondary carriers (generated by impact ionization) to HCD, which was shown to be significant under stress conditions with low  [Formula: see text]  and relatively high  [Formula: see text]. Implementation of this contribution is based on refined modeling of carrier transport for both primary and secondary carriers. To validate the model, we employ foundry-quality n-channel transistors and a broad range of stress voltages  [Formula: see text].
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spelling pubmed-106734302023-10-30 Compact Physics Hot-Carrier Degradation Model Valid over a Wide Bias Range Tyaginov, Stanislav Bury, Erik Grill, Alexander Yu, Zhuoqing Makarov, Alexander De Keersgieter, An Vexler, Mikhail Vandemaele, Michiel Wang, Runsheng Spessot, Alessio Chasin, Adrian Kaczer, Ben Micromachines (Basel) Article We develop a compact physics model for hot-carrier degradation (HCD) that is valid over a wide range of gate and drain voltages ([Formula: see text]  and  [Formula: see text] , respectively). Special attention is paid to the contribution of secondary carriers (generated by impact ionization) to HCD, which was shown to be significant under stress conditions with low  [Formula: see text]  and relatively high  [Formula: see text]. Implementation of this contribution is based on refined modeling of carrier transport for both primary and secondary carriers. To validate the model, we employ foundry-quality n-channel transistors and a broad range of stress voltages  [Formula: see text]. MDPI 2023-10-30 /pmc/articles/PMC10673430/ /pubmed/38004876 http://dx.doi.org/10.3390/mi14112018 Text en © 2023 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Tyaginov, Stanislav
Bury, Erik
Grill, Alexander
Yu, Zhuoqing
Makarov, Alexander
De Keersgieter, An
Vexler, Mikhail
Vandemaele, Michiel
Wang, Runsheng
Spessot, Alessio
Chasin, Adrian
Kaczer, Ben
Compact Physics Hot-Carrier Degradation Model Valid over a Wide Bias Range
title Compact Physics Hot-Carrier Degradation Model Valid over a Wide Bias Range
title_full Compact Physics Hot-Carrier Degradation Model Valid over a Wide Bias Range
title_fullStr Compact Physics Hot-Carrier Degradation Model Valid over a Wide Bias Range
title_full_unstemmed Compact Physics Hot-Carrier Degradation Model Valid over a Wide Bias Range
title_short Compact Physics Hot-Carrier Degradation Model Valid over a Wide Bias Range
title_sort compact physics hot-carrier degradation model valid over a wide bias range
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10673430/
https://www.ncbi.nlm.nih.gov/pubmed/38004876
http://dx.doi.org/10.3390/mi14112018
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