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Compact Physics Hot-Carrier Degradation Model Valid over a Wide Bias Range
We develop a compact physics model for hot-carrier degradation (HCD) that is valid over a wide range of gate and drain voltages ([Formula: see text] and [Formula: see text] , respectively). Special attention is paid to the contribution of secondary carriers (generated by impact ionization) to HCD,...
Autores principales: | , , , , , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2023
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10673430/ https://www.ncbi.nlm.nih.gov/pubmed/38004876 http://dx.doi.org/10.3390/mi14112018 |