Influence of Temperature and Incidence Angle on the Irradiation Cascade Effect of 6H-SiC: Molecular Dynamics Simulations

SiC devices have been typically subjected to extreme environments and complex stresses during operation, such as intense radiation and large diurnal amplitude differences on the lunar surface. Radiation displacement damage may lead to degradation or failure of the performance of semiconductor device...

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Detalles Bibliográficos
Autores principales: Chen, Yaolin, Liu, Hongxia, Yan, Cong, Wei, Hao
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10673490/
https://www.ncbi.nlm.nih.gov/pubmed/38004983
http://dx.doi.org/10.3390/mi14112126

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10673490/
https://www.ncbi.nlm.nih.gov/pubmed/38004983
http://dx.doi.org/10.3390/mi14112126

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