Design of Trench MIS Field Plate Structure for Edge Termination of GaN Vertical PN Diode

In this study, we developed an analytic model to design a trench metal–insulator–semiconductor (MIS) field plate (FP) structure for the edge termination of a vertical GaN PN diode. The key parameters considered in the trench MIS FP structure include trench depth, MIS dielectric material and thicknes...

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Detalles Bibliográficos
Autores principales: Lee, Sung-Hoon, Cha, Ho-Young
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10673548/
https://www.ncbi.nlm.nih.gov/pubmed/38004861
http://dx.doi.org/10.3390/mi14112005

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10673548/
https://www.ncbi.nlm.nih.gov/pubmed/38004861
http://dx.doi.org/10.3390/mi14112005

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