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Design of Trench MIS Field Plate Structure for Edge Termination of GaN Vertical PN Diode
In this study, we developed an analytic model to design a trench metal–insulator–semiconductor (MIS) field plate (FP) structure for the edge termination of a vertical GaN PN diode. The key parameters considered in the trench MIS FP structure include trench depth, MIS dielectric material and thicknes...
| Autores principales: | , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
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MDPI
2023
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10673548/ https://www.ncbi.nlm.nih.gov/pubmed/38004861 http://dx.doi.org/10.3390/mi14112005 |