Power Electronics Revolutionized: A Comprehensive Analysis of Emerging Wide and Ultrawide Bandgap Devices

This article provides a comprehensive review of wide and ultrawide bandgap power electronic semiconductor devices, comparing silicon (Si), silicon carbide (SiC), gallium nitride (GaN), and the emerging device diamond technology. Key parameters examined include bandgap, critical electric field, elect...

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Detalles Bibliográficos
Autores principales: Rafin, S M Sajjad Hossain, Ahmed, Roni, Haque, Md. Asadul, Hossain, Md. Kamal, Haque, Md. Asikul, Mohammed, Osama A.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Review
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10673564/
https://www.ncbi.nlm.nih.gov/pubmed/38004900
http://dx.doi.org/10.3390/mi14112045

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10673564/
https://www.ncbi.nlm.nih.gov/pubmed/38004900
http://dx.doi.org/10.3390/mi14112045

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