Resistive Switching in Bigraphene/Diamane Nanostructures Formed on a La(3)Ga(5)SiO(14) Substrate Using Electron Beam Irradiation

Memristors, resistive switching memory devices, play a crucial role in the energy-efficient implementation of artificial intelligence. This study investigates resistive switching behavior in a lateral 2D composite structure composed of bilayer graphene and 2D diamond (diamane) nanostructures formed...

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Detalles Bibliográficos
Autores principales: Emelin, Evgeny V., Cho, Hak Dong, Korepanov, Vitaly I., Varlamova, Liubov A., Klimchuk, Darya O., Erohin, Sergey V., Larionov, Konstantin V., Kim, Deuk Young, Sorokin, Pavel B., Panin, Gennady N.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10674167/
https://www.ncbi.nlm.nih.gov/pubmed/37999332
http://dx.doi.org/10.3390/nano13222978

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10674167/
https://www.ncbi.nlm.nih.gov/pubmed/37999332
http://dx.doi.org/10.3390/nano13222978

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