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Thermokinetic Study of Aluminum-Induced Crystallization of a-Si: The Effect of Al Layer Thickness
The effect of the aluminum layer on the kinetics and mechanism of aluminum-induced crystallization (AIC) of amorphous silicon (a-Si) in (Al/a-Si)(n) multilayered films was studied using a complex of in situ methods (simultaneous thermal analysis, transmission electron microscopy, electron diffractio...
Autores principales: | , , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2023
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10674580/ https://www.ncbi.nlm.nih.gov/pubmed/37999279 http://dx.doi.org/10.3390/nano13222925 |