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Thermokinetic Study of Aluminum-Induced Crystallization of a-Si: The Effect of Al Layer Thickness

The effect of the aluminum layer on the kinetics and mechanism of aluminum-induced crystallization (AIC) of amorphous silicon (a-Si) in (Al/a-Si)(n) multilayered films was studied using a complex of in situ methods (simultaneous thermal analysis, transmission electron microscopy, electron diffractio...

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Autores principales: Zharkov, Sergey M., Yumashev, Vladimir V., Moiseenko, Evgeny T., Altunin, Roman R., Solovyov, Leonid A., Volochaev, Mikhail N., Zeer, Galina M., Nikolaeva, Nataliya S., Belousov, Oleg V.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10674580/
https://www.ncbi.nlm.nih.gov/pubmed/37999279
http://dx.doi.org/10.3390/nano13222925
_version_ 1785140861600792576
author Zharkov, Sergey M.
Yumashev, Vladimir V.
Moiseenko, Evgeny T.
Altunin, Roman R.
Solovyov, Leonid A.
Volochaev, Mikhail N.
Zeer, Galina M.
Nikolaeva, Nataliya S.
Belousov, Oleg V.
author_facet Zharkov, Sergey M.
Yumashev, Vladimir V.
Moiseenko, Evgeny T.
Altunin, Roman R.
Solovyov, Leonid A.
Volochaev, Mikhail N.
Zeer, Galina M.
Nikolaeva, Nataliya S.
Belousov, Oleg V.
author_sort Zharkov, Sergey M.
collection PubMed
description The effect of the aluminum layer on the kinetics and mechanism of aluminum-induced crystallization (AIC) of amorphous silicon (a-Si) in (Al/a-Si)(n) multilayered films was studied using a complex of in situ methods (simultaneous thermal analysis, transmission electron microscopy, electron diffraction, and four-point probe resistance measurement) and ex situ methods (X-ray diffraction and optical microscopy). An increase in the thickness of the aluminum layer from 10 to 80 nm was found to result in a decrease in the value of the apparent activation energy E(a) of silicon crystallization from 137 to 117 kJ/mol (as estimated by the Kissinger method) as well as an increase in the crystallization heat from 12.3 to 16.0 kJ/(mol Si). The detailed kinetic analysis showed that the change in the thickness of an individual Al layer could lead to a qualitative change in the mechanism of aluminum-induced silicon crystallization: with the thickness of Al ≤ 20 nm. The process followed two parallel routes described by the n-th order reaction equation with autocatalysis (Cn-X) and the Avrami–Erofeev equation (An): with an increase in the thickness of Al ≥ 40 nm, the process occurred in two consecutive steps. The first one can be described by the n-th order reaction equation with autocatalysis (Cn-X), and the second one can be described by the n-th order reaction equation (Fn). The change in the mechanism of amorphous silicon crystallization was assumed to be due to the influence of the degree of Al defects at the initial state on the kinetics of the crystallization process.
format Online
Article
Text
id pubmed-10674580
institution National Center for Biotechnology Information
language English
publishDate 2023
publisher MDPI
record_format MEDLINE/PubMed
spelling pubmed-106745802023-11-10 Thermokinetic Study of Aluminum-Induced Crystallization of a-Si: The Effect of Al Layer Thickness Zharkov, Sergey M. Yumashev, Vladimir V. Moiseenko, Evgeny T. Altunin, Roman R. Solovyov, Leonid A. Volochaev, Mikhail N. Zeer, Galina M. Nikolaeva, Nataliya S. Belousov, Oleg V. Nanomaterials (Basel) Article The effect of the aluminum layer on the kinetics and mechanism of aluminum-induced crystallization (AIC) of amorphous silicon (a-Si) in (Al/a-Si)(n) multilayered films was studied using a complex of in situ methods (simultaneous thermal analysis, transmission electron microscopy, electron diffraction, and four-point probe resistance measurement) and ex situ methods (X-ray diffraction and optical microscopy). An increase in the thickness of the aluminum layer from 10 to 80 nm was found to result in a decrease in the value of the apparent activation energy E(a) of silicon crystallization from 137 to 117 kJ/mol (as estimated by the Kissinger method) as well as an increase in the crystallization heat from 12.3 to 16.0 kJ/(mol Si). The detailed kinetic analysis showed that the change in the thickness of an individual Al layer could lead to a qualitative change in the mechanism of aluminum-induced silicon crystallization: with the thickness of Al ≤ 20 nm. The process followed two parallel routes described by the n-th order reaction equation with autocatalysis (Cn-X) and the Avrami–Erofeev equation (An): with an increase in the thickness of Al ≥ 40 nm, the process occurred in two consecutive steps. The first one can be described by the n-th order reaction equation with autocatalysis (Cn-X), and the second one can be described by the n-th order reaction equation (Fn). The change in the mechanism of amorphous silicon crystallization was assumed to be due to the influence of the degree of Al defects at the initial state on the kinetics of the crystallization process. MDPI 2023-11-10 /pmc/articles/PMC10674580/ /pubmed/37999279 http://dx.doi.org/10.3390/nano13222925 Text en © 2023 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Zharkov, Sergey M.
Yumashev, Vladimir V.
Moiseenko, Evgeny T.
Altunin, Roman R.
Solovyov, Leonid A.
Volochaev, Mikhail N.
Zeer, Galina M.
Nikolaeva, Nataliya S.
Belousov, Oleg V.
Thermokinetic Study of Aluminum-Induced Crystallization of a-Si: The Effect of Al Layer Thickness
title Thermokinetic Study of Aluminum-Induced Crystallization of a-Si: The Effect of Al Layer Thickness
title_full Thermokinetic Study of Aluminum-Induced Crystallization of a-Si: The Effect of Al Layer Thickness
title_fullStr Thermokinetic Study of Aluminum-Induced Crystallization of a-Si: The Effect of Al Layer Thickness
title_full_unstemmed Thermokinetic Study of Aluminum-Induced Crystallization of a-Si: The Effect of Al Layer Thickness
title_short Thermokinetic Study of Aluminum-Induced Crystallization of a-Si: The Effect of Al Layer Thickness
title_sort thermokinetic study of aluminum-induced crystallization of a-si: the effect of al layer thickness
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10674580/
https://www.ncbi.nlm.nih.gov/pubmed/37999279
http://dx.doi.org/10.3390/nano13222925
work_keys_str_mv AT zharkovsergeym thermokineticstudyofaluminuminducedcrystallizationofasitheeffectofallayerthickness
AT yumashevvladimirv thermokineticstudyofaluminuminducedcrystallizationofasitheeffectofallayerthickness
AT moiseenkoevgenyt thermokineticstudyofaluminuminducedcrystallizationofasitheeffectofallayerthickness
AT altuninromanr thermokineticstudyofaluminuminducedcrystallizationofasitheeffectofallayerthickness
AT solovyovleonida thermokineticstudyofaluminuminducedcrystallizationofasitheeffectofallayerthickness
AT volochaevmikhailn thermokineticstudyofaluminuminducedcrystallizationofasitheeffectofallayerthickness
AT zeergalinam thermokineticstudyofaluminuminducedcrystallizationofasitheeffectofallayerthickness
AT nikolaevanataliyas thermokineticstudyofaluminuminducedcrystallizationofasitheeffectofallayerthickness
AT belousovolegv thermokineticstudyofaluminuminducedcrystallizationofasitheeffectofallayerthickness