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Thermokinetic Study of Aluminum-Induced Crystallization of a-Si: The Effect of Al Layer Thickness

The effect of the aluminum layer on the kinetics and mechanism of aluminum-induced crystallization (AIC) of amorphous silicon (a-Si) in (Al/a-Si)(n) multilayered films was studied using a complex of in situ methods (simultaneous thermal analysis, transmission electron microscopy, electron diffractio...

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Detalles Bibliográficos
Autores principales:	Zharkov, Sergey M., Yumashev, Vladimir V., Moiseenko, Evgeny T., Altunin, Roman R., Solovyov, Leonid A., Volochaev, Mikhail N., Zeer, Galina M., Nikolaeva, Nataliya S., Belousov, Oleg V.
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2023
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10674580/ https://www.ncbi.nlm.nih.gov/pubmed/37999279 http://dx.doi.org/10.3390/nano13222925

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