Automotive 2.1 μm Full-Depth Deep Trench Isolation CMOS Image Sensor with a 120 dB Single-Exposure Dynamic Range †

An automotive 2.1 μm CMOS image sensor has been developed with a full-depth deep trench isolation and an advanced readout circuit technology. To achieve a high dynamic range, we employ a sub-pixel structure featuring a high conversion gain of a large photodiode and a lateral overflow of a small phot...

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Detalles Bibliográficos
Autores principales: Yoo, Dongsuk, Jang, Youngtae, Kim, Youngchan, Shin, Jihun, Lee, Kangsun, Park, Seok-Yong, Shin, Seungho, Lee, Hongsuk, Kim, Seojoo, Park, Joongseok, Park, Cheonho, Lim, Moosup, Bae, Hyungjin, Park, Soeun, Jung, Minwook, Kim, Sungkwan, Choi, Shinyeol, Kim, Sejun, Heo, Jinkyeong, Lee, Hojoon, Lee, KyungChoon, Jeong, Youngkyun, Oh, Youngsun, Keel, Min-Sun, Kim, Bumsuk, Lee, Haechang, Ahn, JungChak
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10675219/
https://www.ncbi.nlm.nih.gov/pubmed/38005536
http://dx.doi.org/10.3390/s23229150

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10675219/
https://www.ncbi.nlm.nih.gov/pubmed/38005536
http://dx.doi.org/10.3390/s23229150

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