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Automotive 2.1 μm Full-Depth Deep Trench Isolation CMOS Image Sensor with a 120 dB Single-Exposure Dynamic Range †
An automotive 2.1 μm CMOS image sensor has been developed with a full-depth deep trench isolation and an advanced readout circuit technology. To achieve a high dynamic range, we employ a sub-pixel structure featuring a high conversion gain of a large photodiode and a lateral overflow of a small phot...
Autores principales: | Yoo, Dongsuk, Jang, Youngtae, Kim, Youngchan, Shin, Jihun, Lee, Kangsun, Park, Seok-Yong, Shin, Seungho, Lee, Hongsuk, Kim, Seojoo, Park, Joongseok, Park, Cheonho, Lim, Moosup, Bae, Hyungjin, Park, Soeun, Jung, Minwook, Kim, Sungkwan, Choi, Shinyeol, Kim, Sejun, Heo, Jinkyeong, Lee, Hojoon, Lee, KyungChoon, Jeong, Youngkyun, Oh, Youngsun, Keel, Min-Sun, Kim, Bumsuk, Lee, Haechang, Ahn, JungChak |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2023
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10675219/ https://www.ncbi.nlm.nih.gov/pubmed/38005536 http://dx.doi.org/10.3390/s23229150 |
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