Effect of laser fluence on the optoelectronic properties of nanostructured GaN/porous silicon prepared by pulsed laser deposition

In this study, the fabrication of nanostructured GaN/porous Si by pulsed laser deposition (PLD) was demonstrated. The porous silicon was prepared using laser-assisted electrochemical etching (LAECE). The structural, optical, and electrical properties of GaN films were investigated as a function of l...

Descripción completa

Detalles Bibliográficos
Autores principales: Fakhri, Makram A., Jabbar, Haneen D., AbdulRazzaq, Mohammed Jalal, Salim, Evan T., Azzahrani, Ahmad S., Ibrahim, Raed Khalid, Ismail, Raid A.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10686998/
https://www.ncbi.nlm.nih.gov/pubmed/38030706
http://dx.doi.org/10.1038/s41598-023-47955-3

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10686998/
https://www.ncbi.nlm.nih.gov/pubmed/38030706
http://dx.doi.org/10.1038/s41598-023-47955-3

Ejemplares similares