Nucleation and Growth of GaAs on a Carbon Release Layer by Halide Vapor Phase Epitaxy

[Image: see text] We couple halide vapor phase epitaxy (HVPE) growth of III–V materials with liftoff from an ultrathin carbon release layer to address two significant cost components in III–V device - epitaxial growth and substrate reusability. We investigate nucleation and growth of GaAs layers by...

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Detalles Bibliográficos
Autores principales: Roberts, Dennice M., Kim, Hyunseok, McClure, Elisabeth L., Lu, Kuangye, Mangum, John S., Braun, Anna K., Ptak, Aaron J., Schulte, Kevin L., Kim, Jeehwan, Simon, John
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2023
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10688164/
https://www.ncbi.nlm.nih.gov/pubmed/38046304
http://dx.doi.org/10.1021/acsomega.3c07162

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10688164/
https://www.ncbi.nlm.nih.gov/pubmed/38046304
http://dx.doi.org/10.1021/acsomega.3c07162

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