High-performance van der Waals antiferroelectric CuCrP(2)S(6)-based memristors

Layered thio- and seleno-phosphate ferroelectrics, such as CuInP(2)S(6), are promising building blocks for next-generation nonvolatile memory devices. However, because of the low Curie point, the CuInP(2)S(6)-based memory devices suffer from poor thermal stability (<42 °C). Here, exploiting the e...

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Detalles Bibliográficos
Autores principales: Ma, Yinchang, Yan, Yuan, Luo, Linqu, Pazos, Sebastian, Zhang, Chenhui, Lv, Xiang, Chen, Maolin, Liu, Chen, Wang, Yizhou, Chen, Aitian, Li, Yan, Zheng, Dongxing, Lin, Rongyu, Algaidi, Hanin, Sun, Minglei, Liu, Jefferson Zhe, Tu, Shaobo, Alshareef, Husam N., Gong, Cheng, Lanza, Mario, Xue, Fei, Zhang, Xixiang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10689492/
https://www.ncbi.nlm.nih.gov/pubmed/38036500
http://dx.doi.org/10.1038/s41467-023-43628-x

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10689492/
https://www.ncbi.nlm.nih.gov/pubmed/38036500
http://dx.doi.org/10.1038/s41467-023-43628-x

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