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High-performance van der Waals antiferroelectric CuCrP(2)S(6)-based memristors
Layered thio- and seleno-phosphate ferroelectrics, such as CuInP(2)S(6), are promising building blocks for next-generation nonvolatile memory devices. However, because of the low Curie point, the CuInP(2)S(6)-based memory devices suffer from poor thermal stability (<42 °C). Here, exploiting the e...
Autores principales: | , , , , , , , , , , , , , , , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2023
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10689492/ https://www.ncbi.nlm.nih.gov/pubmed/38036500 http://dx.doi.org/10.1038/s41467-023-43628-x |