Role of oxygen vacancies in ferroelectric or resistive switching hafnium oxide

HfO(2) shows promise for emerging ferroelectric and resistive switching (RS) memory devices owing to its excellent electrical properties and compatibility with complementary metal oxide semiconductor technology based on mature fabrication processes such as atomic layer deposition. Oxygen vacancy (V(...

Descripción completa

Detalles Bibliográficos
Autores principales: Lee, Jaewook, Yang, Kun, Kwon, Ju Young, Kim, Ji Eun, Han, Dong In, Lee, Dong Hyun, Yoon, Jung Ho, Park, Min Hyuk
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer Nature Singapore 2023
Materias:
Review
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10692067/
https://www.ncbi.nlm.nih.gov/pubmed/38038784
http://dx.doi.org/10.1186/s40580-023-00403-4

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10692067/
https://www.ncbi.nlm.nih.gov/pubmed/38038784
http://dx.doi.org/10.1186/s40580-023-00403-4

Ejemplares similares